Cathodoluminescence depth profiling of ion-implanted GaN
نویسندگان
چکیده
منابع مشابه
Glow Discharge Depth Profiling a Powerful Analytical Technique in Surface Engineering (TECHNICAL NOTE)
A variety of analytical techniques have been developed and employed to characterize the surfaces, subsurfaces and interfaces of surface engineering systems. They provide important information for quality control, process optimization and further development. Since the mid 1980's, glow discharge spectrometry (GDS) has emerged as an important and versatile technique for rapid depth profiling anal...
متن کاملEffects of low energy e-beam irradiation on cathodoluminescence from GaN
We present cathodoluminescence (CL) studies on low energy e-beam irradiated (LEEBI) metal-organic vapor phase epitaxy (MOVPE) grown GaN films. High intensity LEEBI has been reported to reduce the band-edge photoluminescence intensity of MOVPE grown GaN films. Here we observe similar reduction of band-edge CL intensity with increasing LEEBI dose. The irradiation damage is found to be concentrate...
متن کاملMicrocathodoluminescence of impurity doping at gallium nitrideÕsapphire interfaces
We have used low-temperature cathodoluminescence spectroscopy ~CLS! to probe the spatial distribution and energies of electronic defects near GaN/Al2O3 interfaces grown by hydride vapor phase epitaxy ~HVPE!. Cross sectional secondary electron microscopy CLS shows systematic variations in impurity/defect emissions over a wide range of HVPE GaN/Sapphire electronic properties. These data, along wi...
متن کاملEnhanced wet etching of patterned GaN with ion implantation.
We present the enhanced wet etching of GaN epilayer implanted with Au+ ion. Patterned GaN with 2 microm-wide sink-like strips was achieved by using 500 keV Au+ ion implantation and KOH etching. The Dependence of etching depth on etching time for the implantation at different ion fluences was investigated. The experiment showed that the damaged GaN area could be almost etched out at high ion flu...
متن کاملExciton dynamics at a single dislocation in GaN probed by picosecond time-resolved cathodoluminescence
Articles you may be interested in Exciton recombination dynamics in a-plane (Al,Ga)N/GaN quantum wells probed by picosecond photo and cathodoluminescence J. Low-temperature time-resolved cathodoluminescence study of exciton dynamics involving basal stacking faults in a-plane GaN Appl. Time-resolved cathodoluminescence and photocurrent study of the yellow band in Si-doped GaN Carrier relaxation ...
متن کامل